{"title":"AlGaN/GaN HEMT的直流、射频和噪声特性","authors":"Shivansh Awasthi, Prof Vikas Kumar, P. Shrivastava, Pragyey Kumar Kaushik, Ankur Gupta","doi":"10.1109/DELCON57910.2023.10127539","DOIUrl":null,"url":null,"abstract":"In this work, DC and RF characterization of AlGaN/GaN HEMT on SiC substrate was carried out. It was found that the maximum drain on current (I<inf>ON</inf>) was 0.12 A/mm at a drain to source (V<inf>DS</inf>) bias of 9 V and at the gate to source bias (V<inf>GS</inf>) of 2 V. The maximum transconductance (g<inf>m</inf>) of the device was calculated to be 0.02 S. S21 parameter of the device was measured from 100 MHz to 50 GHz. The measurement of S parameters was done by the variation of V<inf>GS</inf> and V<inf>DS</inf>. The Noise Figure measurements of the device were done by varying the frequency from 2 GHz to 10 GHz using a Noise Figure Analyzer.","PeriodicalId":193577,"journal":{"name":"2023 2nd Edition of IEEE Delhi Section Flagship Conference (DELCON)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"DC, RF and Noise Characterization of AlGaN/GaN HEMT\",\"authors\":\"Shivansh Awasthi, Prof Vikas Kumar, P. Shrivastava, Pragyey Kumar Kaushik, Ankur Gupta\",\"doi\":\"10.1109/DELCON57910.2023.10127539\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, DC and RF characterization of AlGaN/GaN HEMT on SiC substrate was carried out. It was found that the maximum drain on current (I<inf>ON</inf>) was 0.12 A/mm at a drain to source (V<inf>DS</inf>) bias of 9 V and at the gate to source bias (V<inf>GS</inf>) of 2 V. The maximum transconductance (g<inf>m</inf>) of the device was calculated to be 0.02 S. S21 parameter of the device was measured from 100 MHz to 50 GHz. The measurement of S parameters was done by the variation of V<inf>GS</inf> and V<inf>DS</inf>. The Noise Figure measurements of the device were done by varying the frequency from 2 GHz to 10 GHz using a Noise Figure Analyzer.\",\"PeriodicalId\":193577,\"journal\":{\"name\":\"2023 2nd Edition of IEEE Delhi Section Flagship Conference (DELCON)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-02-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 2nd Edition of IEEE Delhi Section Flagship Conference (DELCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DELCON57910.2023.10127539\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 2nd Edition of IEEE Delhi Section Flagship Conference (DELCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DELCON57910.2023.10127539","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
DC, RF and Noise Characterization of AlGaN/GaN HEMT
In this work, DC and RF characterization of AlGaN/GaN HEMT on SiC substrate was carried out. It was found that the maximum drain on current (ION) was 0.12 A/mm at a drain to source (VDS) bias of 9 V and at the gate to source bias (VGS) of 2 V. The maximum transconductance (gm) of the device was calculated to be 0.02 S. S21 parameter of the device was measured from 100 MHz to 50 GHz. The measurement of S parameters was done by the variation of VGS and VDS. The Noise Figure measurements of the device were done by varying the frequency from 2 GHz to 10 GHz using a Noise Figure Analyzer.
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