{"title":"多孔硅阳极氧化EL效率的提高及微观结构分析新方法的应用","authors":"T. Sakai, T. Suzuki, Li Zhang","doi":"10.1109/DRC.1995.496301","DOIUrl":null,"url":null,"abstract":"The relation between light emitting characteristics and the porous silicon microstructure has been analyzed by applying a new in situ electroluminescence and photoluminescence spectra measurement technique during anodic oxidation. On the basis of this result, a porous silicon structure has been modified to improve /spl nu/ (the external light emission efficiency), and a maximum /spl nu/ of 0.35%, the highest confirmed value ever reported, has been obtained.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement of porous silicon EL efficiency during anodic oxidation and the application of a new microstructure analysis method\",\"authors\":\"T. Sakai, T. Suzuki, Li Zhang\",\"doi\":\"10.1109/DRC.1995.496301\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The relation between light emitting characteristics and the porous silicon microstructure has been analyzed by applying a new in situ electroluminescence and photoluminescence spectra measurement technique during anodic oxidation. On the basis of this result, a porous silicon structure has been modified to improve /spl nu/ (the external light emission efficiency), and a maximum /spl nu/ of 0.35%, the highest confirmed value ever reported, has been obtained.\",\"PeriodicalId\":326645,\"journal\":{\"name\":\"1995 53rd Annual Device Research Conference Digest\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 53rd Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1995.496301\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496301","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improvement of porous silicon EL efficiency during anodic oxidation and the application of a new microstructure analysis method
The relation between light emitting characteristics and the porous silicon microstructure has been analyzed by applying a new in situ electroluminescence and photoluminescence spectra measurement technique during anodic oxidation. On the basis of this result, a porous silicon structure has been modified to improve /spl nu/ (the external light emission efficiency), and a maximum /spl nu/ of 0.35%, the highest confirmed value ever reported, has been obtained.
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