{"title":"SPIN整流器，一种新型的快速恢复装置","authors":"P. Hower, C. E. Weaver","doi":"10.1109/PESC.1988.18200","DOIUrl":null,"url":null,"abstract":"A fast-recovery rectifier design is described for blocking voltages in excess of 50 V. The SPIN rectifier is a parallel combination of dispersed Schottky and p-i-n rectifiers. Recovery time of 35 ns is achieved at I/sub F/=70 A for breakdown voltages in excess of 200 V. Experimental studies of reverse recovery, the effect of pattern variation, increased n-layer thickness, and reverse current are described.<<ETX>>","PeriodicalId":283605,"journal":{"name":"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference","volume":"318 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"The SPIN rectifier, a new fast-recovery device\",\"authors\":\"P. Hower, C. E. Weaver\",\"doi\":\"10.1109/PESC.1988.18200\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fast-recovery rectifier design is described for blocking voltages in excess of 50 V. The SPIN rectifier is a parallel combination of dispersed Schottky and p-i-n rectifiers. Recovery time of 35 ns is achieved at I/sub F/=70 A for breakdown voltages in excess of 200 V. Experimental studies of reverse recovery, the effect of pattern variation, increased n-layer thickness, and reverse current are described.<<ETX>>\",\"PeriodicalId\":283605,\"journal\":{\"name\":\"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference\",\"volume\":\"318 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1988.18200\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1988.18200","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A fast-recovery rectifier design is described for blocking voltages in excess of 50 V. The SPIN rectifier is a parallel combination of dispersed Schottky and p-i-n rectifiers. Recovery time of 35 ns is achieved at I/sub F/=70 A for breakdown voltages in excess of 200 V. Experimental studies of reverse recovery, the effect of pattern variation, increased n-layer thickness, and reverse current are described.<>
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