用于医疗植入物通信的SiGe BiCMOS技术的0.48 mW完全集成MICS频段VCO

M. Nenadovic, N. Fiebig, G. Fischer, D. Kissinger, J. Wessel
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引用次数: 2

摘要

本文介绍了一种低功耗压控振荡器的设计,它是MICS频段(402-405 MHz)全集成、直接调制、纯压控振荡器发射机的一部分。差分LC-tank VCO设计用于支持高达200kbps数据速率的MSK发射器,用于葡萄糖传感器植入。该芯片采用ihp 0.13 μm SiGe BiCMOS工艺的CMOS部分制造,有效面积为0.86 mm2。测量的VCO在载波200 kHz偏移时显示出- 110 dBc/Hz的相位噪声,调谐范围为22.6 MHz(5.6%),同时从0.87 V电源(0.48 mW)消耗0.55 mA。所测压控振荡器的相位噪声性能、尺寸和功耗均满足植入式电子器件的要求。因此,该VCO是构建更复杂的多通道MICS频段发射机的重要模块。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.48 mW fully integrated MICS band VCO in SiGe BiCMOS technology for medical implant communication
This paper presents the design of a low power VCO, that is a part of a fully integrated, directly modulated, VCO-only transmitter in MICS band (402–405 MHz). The differential LC-tank VCO is designed for a MSK transmitter supporting up to 200 kbps data rate for the application in a glucose sensor implant. The chip is fabricated in the CMOS section of IHPs 0.13 μm SiGe BiCMOS process and has an active area of 0.86 mm2. The measured VCO has shown −110 dBc/Hz phase noise at 200 kHz offset from the carrier and a tuning range of 22.6 MHz (5.6 %), while consuming 0.55 mA from a 0.87 V supply (0.48 mW). The phase noise performance, size and power consumption of the measured VCO satisfy the requirements of implantable electronics. This VCO is therefore an important block in building a more complex, multi-channel MICS band transmitter.
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