载流子注入对GaAs/AlAs共振隧道二极管激子动力学的影响

EPL (Europhysics Letters) Pub Date : 2009-03-01 DOI:10.1209/0295-5075/85/67010

F. J. Teran, M. Martín, J. Calleja, L. Viña, L. Eaves, M. Henini

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引用次数: 5

摘要

我们研究了在外加偏压作用下嵌入双势垒共振隧道二极管的量子阱中产生的激子的动力学。我们发现激子动力学与载流子隧穿过程高度相关。隧道效应通过激子-载流子散射过程有利于激子弛豫。

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Carrier injection effects on exciton dynamics in GaAs/AlAs resonant-tunneling diodes

We investigate the dynamics of excitons created in a quantum well embedded in a double-barrier resonant-tunneling diode under applied bias. We find that the exciton dynamics is highly correlated with carrier tunneling processes. The tunneling favors exciton relaxation via exciton-carrier scattering processes.

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EPL (Europhysics Letters)

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