功率逆变器中基于散热器参数的MOSFET芯片温度响应曲线建模

F. Onoroh, M. Ogbonnaya, U. Onochie
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引用次数: 0

摘要

:直流转交流转换器应用于太阳能、风能等可再生能源的转换。开关操作是由金属氧化物半导体场效应晶体管芯片(MOSFET)完成的,在操作过程中会产生热量,如果产生的热量没有得到适当的散热,就可能导致热致故障。本研究模拟了MOSFET芯片的温度分布及其所连接的散热片的几何特性。在MATLAB环境下实现了该模型,得到了最优散热器参数,并用ANSYS进行了数值求解,并在一台1.6 kW逆变器上进行了实验测试。在脉冲负载为1000W时,通过解析、数值和实验得到的MOSFET最高温度分别为73.68℃、81.44℃和87.35℃。优化后的散热片温度在脉冲负载为1000W时偏差为7%,在600W ~ 1000W的功率范围内平均偏差为17%,结果表明优化后的散热片在MOSFET芯片上工作良好,该模型可用于功率逆变器的快速成型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling Temperature Response Profile of MOSFET Chip with Heat Sink Parameters in Power Inverters
: Direct current to alternating current converter is applied in the conversion of renewable energy such as solar and wind energy. The switching operation is performed by metal oxide semiconductor field effect transistor chips (MOSFET), during the operation heat is generated and if the heat generated is not properly dissipated, it may lead to thermally induced failure. This research modelled the temperature profile of the MOSFET chip with geometrical properties of the heat sink to which they are attached. The model was implemented in a MATLAB environment to obtained optimal heat sink parameters which was solved numerically with ANSYS and experimentally tested in a 1.6 kW inverter. The maximum MOSFET temperature obtained analytically, numerically and experimentally are is 73.68°C, 81.44°C and 87.35°C at a pulse load of 1000W. The numerical and experimental results of the optimized heat sink temperatures show good correlation with 7% deviation at a pulse load of 1000W and an average deviation of 17% in the power range of 600W to 1000W which shows that the optimized heat sink for the MOSFET chips work well and the model can be deploy for rapid prototyping of power inverter.
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