Measurement based behavioral modeling of impedance dependent transistor non-linearity

A novel modeling approach is presented that utilizes load pull measurements at a number of known terminations and fits a data based model of the measured parameter as a function of the fundamental and harmonic termination. The techniques utilizes a solid-state, single load pull tuner without a multiplexer or harmonic loops. It creates a general equation of device performance with predictive abilities. This paper presents the measurement system, the modeling approach, and the measured and predicted results.