利用RFCV技术提取24nm通道长度n-MOS的迁移率:制备工艺的影响

2017 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC) Pub Date : 2017-11-01 DOI:10.1109/ROPEC.2017.8261677

L. Trojman, Diego R. Benalcázar, L. Prócel, Guillaume Jobard

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引用次数: 0

摘要

在本文中，我们使用RFCV技术研究了短器件(低至24纳米通道长度)的迁移率。我们还评估了该技术对于此类小型设备的可靠性，并讨论了外部过程效应(如HALO)对迁移率退化的影响。利用额外的迁移率，我们推断出这种降解是由于HALO技术引起的掺杂浓度的增加，这也影响了低有效场的筛选效果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mobility extraction for 24-nm-channel length n-MOS using the RFCV technique: Effect of the fabrication process

In this article, we study the mobility for short devices (down to 24-nm-channel length) using the RFCV technique. We also evaluate how this technique is reliable for such small devices and discuss the consequences of extrinsic process effects like the HALO on the mobility degradation. Using the additional mobility, we deduce that this degradation occurs due to an increase in the doping concentration caused by the HALO technique, which also affects the screening effect at low effective field.

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来源期刊

2017 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC)

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