双极结二极管(BJD)是一种新型功率二极管

6th IEEE Power Electronics Congress. Technical Proceedings. CIEP 98 (Cat. No.98TH8375) Pub Date : 1998-10-12 DOI:10.1109/CIEP.1998.750678

B. You, A.Q. Huang, Bo Zhang, Yuxin Li

{"title":"双极结二极管(BJD)是一种新型功率二极管","authors":"B. You, A.Q. Huang, Bo Zhang, Yuxin Li","doi":"10.1109/CIEP.1998.750678","DOIUrl":null,"url":null,"abstract":"In this paper, a new power diode structure, called the bipolar junction diode (BJD) is proposed. It has superior dynamic characteristics over the conventional p-i-n diode. For the first time, it demonstrates the possibility to control the injection efficiency of the p+/n- junction of a p-i-n diode by varying the gain of a bipolar transistor which is merged with the junction and operated in a reverse active fashion. Both numerical simulations and experimental results are provided to illustrate this novel concept.","PeriodicalId":378425,"journal":{"name":"6th IEEE Power Electronics Congress. Technical Proceedings. CIEP 98 (Cat. No.98TH8375)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The bipolar junction diode (BJD)-a new power diode concept\",\"authors\":\"B. You, A.Q. Huang, Bo Zhang, Yuxin Li\",\"doi\":\"10.1109/CIEP.1998.750678\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new power diode structure, called the bipolar junction diode (BJD) is proposed. It has superior dynamic characteristics over the conventional p-i-n diode. For the first time, it demonstrates the possibility to control the injection efficiency of the p+/n- junction of a p-i-n diode by varying the gain of a bipolar transistor which is merged with the junction and operated in a reverse active fashion. Both numerical simulations and experimental results are provided to illustrate this novel concept.\",\"PeriodicalId\":378425,\"journal\":{\"name\":\"6th IEEE Power Electronics Congress. Technical Proceedings. CIEP 98 (Cat. No.98TH8375)\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"6th IEEE Power Electronics Congress. Technical Proceedings. CIEP 98 (Cat. No.98TH8375)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CIEP.1998.750678\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"6th IEEE Power Electronics Congress. Technical Proceedings. CIEP 98 (Cat. No.98TH8375)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIEP.1998.750678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文提出了一种新的功率二极管结构——双极结二极管(BJD)。它具有优于传统p-i-n二极管的动态特性。它首次证明了通过改变与p-i-n二极管的p+/n-结合并并以反向有源方式工作的双极晶体管的增益来控制p+/n-结注入效率的可能性。数值模拟和实验结果都说明了这个新概念。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The bipolar junction diode (BJD)-a new power diode concept

In this paper, a new power diode structure, called the bipolar junction diode (BJD) is proposed. It has superior dynamic characteristics over the conventional p-i-n diode. For the first time, it demonstrates the possibility to control the injection efficiency of the p+/n- junction of a p-i-n diode by varying the gain of a bipolar transistor which is merged with the junction and operated in a reverse active fashion. Both numerical simulations and experimental results are provided to illustrate this novel concept.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

6th IEEE Power Electronics Congress. Technical Proceedings. CIEP 98 (Cat. No.98TH8375)

自引率

0.00%

发文量