低漏极工作的MESFET电容模型

IEEE Princeton Section Sarnoff Symposium Pub Date : 1995-04-28 DOI:10.1109/SARNOF.1995.636684

Y. Lan, C. Wei, J.C.M. Hwang

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引用次数: 0

摘要

提出了一种新的适用于漏极电压工作的GaAs mesfet电容模型。该模型除了包括栅极-偏置依赖外，还包括栅极-源和栅极-漏极电容的漏极-偏置依赖。模拟的电容值与从测量的s参数中提取的电容值比较好。该模型已应用于谐波平衡商用模拟器，仿真结果与实测数据吻合较好。

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A MESFET capacitance model for low-drain voltage operation

A new capacitance model for GaAs MESFETs suitable for bwdrain voltage operation is presented. The model includes, in addition to gate-bias dependence, drain-bias dependence of gate-source and gate-drain capacitances. The modeled capacitance values compare well with that extracted from measured S-parameters. The model bas been incorporated in a harmonic-balance commercial simulator, and the simulated MESFET power performance is in good agreement with measured data.

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IEEE Princeton Section Sarnoff Symposium

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