时间零变异性和NBTI降解后SRAM细胞动态和静态指标的相关性

S. P. Chaudhari, Jani Babu Shaik, S. Singhal, Nilesh Goel
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引用次数: 4

摘要

静态指标通常用于描述SRAM单元的读取稳定性和可写性。本文讨论了两个主要的动态SRAM指标:临界读稳定性(TREAD)和临界可写性(TWRITE),并将其与静态指标相关联。对于动态和静态指标之间的相关性,在时间零和NBTI降解后的SRAM单元进行了变异性分析。比较了NBTI退化前后相关因子的位移。动态和静态度量之间的相关性评估用于识别那些最能捕获单元动态行为的静态度量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Correlation of Dynamic and Static Metrics of SRAM Cell under Time-Zero Variability and After NBTI Degradation
Static metrics are often used to characterize read stability and write-ability of an SRAM cell. In this paper, two major dynamic SRAM metrics: critical read stability (TREAD) and critical writeability (TWRITE) are discussed and correlated with static metrics. For correlation between dynamic and static metrics, variability analysis is carried out at time-zero and after NBTI degradation of the SRAM cell. Shift in correlation factor is compared for before and after NBTI degradation. Assessment of correlation between dynamic and static metrics is used to identify those static metrics which best capture the dynamic behavior of the cell.
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