基于65nm闪存的fpga上重离子诱导单事件瞬态的新传播模型

B. Du, M. Colucci, S. Francola, L. Aranci, E. Artina, N. Ratti, E. Picardi, R. Mancini, V. Piloni, S. Azimi, L. Sterpone
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引用次数: 1

摘要

提出了一种基于han -smoothing函数的65nm flash fpga的SET生成和传播模型。该模型具有重离子辐射运动的特征,证明了其用于电路分析和缓解目的的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Novel Propagation Model for Heavy-Ions Induced Single Event Transients on 65nm Flash-based FPGAs
We present a SET generation and propagation model based on Hann-smoothing function for 65nm Flash-based FPGAs. The model has been characterized with heavy-ions radiation campaigns demonstrating its viable usage for circuit analysis and mitigation purposes.
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