用于CAD的微波P-I-N二极管的物理非线性模型

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282808

E. Gatard, P. Bouysse, R. Sommet, R. Quéré, J. Bureau, P. Ledieu, M. Stanislawiak, C. Tolant

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引用次数: 1

摘要

提出了一种用于开关和限流的p-i-n二极管模型。该模型可以模拟控制二极管阻抗-频率特性的i区存储电荷效应。该模型还包括重掺杂区域的复合现象和结效应。该二极管模型已在商用电路模拟器上实现，并通过测量结果验证了其正确性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Physics-Based Nonlinear Model of Microwave P-I-N Diode for CAD

A p-i-n diode model for switching and limiting applications is presented. The model allows to simulate the I-region store charge effect that governs the impedance-frequency characteristic of the diode. The model also includes recombination phenomenon in the heavily doped region and junctions effects. The diode model has been implemented in a commercial circuit simulator and validated with a good agreement by measurement results

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来源期刊

2006 European Microwave Integrated Circuits Conference

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