利用化学氧化物和优化后退火，改进了n/sup +/多晶硅栅极的ALD HfO/ sub2 /和Hf-Al-O的薄膜生长和平带电压控制

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015401

G. Wilk, M. Green, M. Ho, B. Busch, T. Sorsch, F. Klemens, B. Brijs, R. V. van Dover, A. Kornblit, T. Gustafsson, E. Garfunkel, S. Hillenius, D. Monroe, P. Kalavade, J. Hergenrother

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引用次数: 26

摘要

我们首次证明，与热氧化物相比，化学氧化下层/spl sim/5 /spl Aring/ thick提供了更好的ALD HfO/sub 2/薄膜的生长和平带电压控制。结果表明，优化后的退火条件大大降低了高/spl kappa/堆叠中的固定电荷和界面氧化物的生长。实现了<30 mV的极小的平坦带电压位移，对应于非常低的固定电荷Q/sub / f/ spl sim/2E11/cm/sup /。

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Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing

We demonstrate for the first time that chemical oxide underlayers /spl sim/5 /spl Aring/ thick provide improved growth and flatband voltage control of ALD HfO/sub 2/ films compared to thermal oxides. Optimized annealing conditions are shown to greatly reduce both fixed charge and interfacial oxide growth in the high-/spl kappa/ stacks. Extremely small flatband voltage shifts of <30 mV are achieved, corresponding to a very low fixed charge of Q/sub f//spl sim/2E11/cm/sup 2/.

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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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