{"title":"植入缺陷和碳掺杂对Si/SiGe双极特性的影响","authors":"M. Bouhouche, S. Latreche, C. Gontrand","doi":"10.1109/ICCEE.2009.180","DOIUrl":null,"url":null,"abstract":"Incorporation of Carbon in SiGe has attracted great interest, which makes SiGeC based heterojunction transistors as an attractive device for high frequency applications. Carbon addition in SiGe dramatically reduces out-diffusion of Boron caused by excess of interstitials generated by extrinsic base implantation. However Carbon incorporation negatively influences the electrical device characteristics. In this paper we investigate active implantation defects, the aim was to the specify space localization and parasitic effects of this ones. Second, we investigate the impact of Carbon content on the electrical characteristics of devise, the results show that indeed C contents ≥ 1% severely degrade transistor performances.","PeriodicalId":343870,"journal":{"name":"2009 Second International Conference on Computer and Electrical Engineering","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of Implantation Defects and Carbon Incorporation on Si/SiGe Bipolar Characteristics\",\"authors\":\"M. Bouhouche, S. Latreche, C. Gontrand\",\"doi\":\"10.1109/ICCEE.2009.180\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Incorporation of Carbon in SiGe has attracted great interest, which makes SiGeC based heterojunction transistors as an attractive device for high frequency applications. Carbon addition in SiGe dramatically reduces out-diffusion of Boron caused by excess of interstitials generated by extrinsic base implantation. However Carbon incorporation negatively influences the electrical device characteristics. In this paper we investigate active implantation defects, the aim was to the specify space localization and parasitic effects of this ones. Second, we investigate the impact of Carbon content on the electrical characteristics of devise, the results show that indeed C contents ≥ 1% severely degrade transistor performances.\",\"PeriodicalId\":343870,\"journal\":{\"name\":\"2009 Second International Conference on Computer and Electrical Engineering\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Second International Conference on Computer and Electrical Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCEE.2009.180\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Second International Conference on Computer and Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCEE.2009.180","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of Implantation Defects and Carbon Incorporation on Si/SiGe Bipolar Characteristics
Incorporation of Carbon in SiGe has attracted great interest, which makes SiGeC based heterojunction transistors as an attractive device for high frequency applications. Carbon addition in SiGe dramatically reduces out-diffusion of Boron caused by excess of interstitials generated by extrinsic base implantation. However Carbon incorporation negatively influences the electrical device characteristics. In this paper we investigate active implantation defects, the aim was to the specify space localization and parasitic effects of this ones. Second, we investigate the impact of Carbon content on the electrical characteristics of devise, the results show that indeed C contents ≥ 1% severely degrade transistor performances.