高电源抑制宽带低差稳压器

Thomas Coulot, E. Rouat, F. Hasbani, E. Lauga-Larroze, J. Fournier
{"title":"高电源抑制宽带低差稳压器","authors":"Thomas Coulot, E. Rouat, F. Hasbani, E. Lauga-Larroze, J. Fournier","doi":"10.1109/ECCE-ASIA.2013.6579133","DOIUrl":null,"url":null,"abstract":"A 90nm 1.4-3.3V CMOS Low-Dropout regulator for noise-sensitive low-current RF blocks in mixed SoC applications is presented. It is based on a two loops topology with replica technique and an additional Gm-C filter introduced in the replica loop for high power supply rejection at both low and high frequencies. Complete PSR and stability analyses are presented. The regulator is implemented in a 90nm CMOS technology and achieves a PSR better than -60dB from 0 to 30MHz with only a 47nF external output capacitor. This architecture is highly versatile since the replica design may remain very basic. The active chip area is only 0.0088mm2, making this LDO an ideal block for a locally distributed power management strategy.","PeriodicalId":301487,"journal":{"name":"2013 IEEE ECCE Asia Downunder","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High power supply rejection wideband Low-Dropout regulator\",\"authors\":\"Thomas Coulot, E. Rouat, F. Hasbani, E. Lauga-Larroze, J. Fournier\",\"doi\":\"10.1109/ECCE-ASIA.2013.6579133\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 90nm 1.4-3.3V CMOS Low-Dropout regulator for noise-sensitive low-current RF blocks in mixed SoC applications is presented. It is based on a two loops topology with replica technique and an additional Gm-C filter introduced in the replica loop for high power supply rejection at both low and high frequencies. Complete PSR and stability analyses are presented. The regulator is implemented in a 90nm CMOS technology and achieves a PSR better than -60dB from 0 to 30MHz with only a 47nF external output capacitor. This architecture is highly versatile since the replica design may remain very basic. The active chip area is only 0.0088mm2, making this LDO an ideal block for a locally distributed power management strategy.\",\"PeriodicalId\":301487,\"journal\":{\"name\":\"2013 IEEE ECCE Asia Downunder\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE ECCE Asia Downunder\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECCE-ASIA.2013.6579133\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE ECCE Asia Downunder","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCE-ASIA.2013.6579133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

提出了一种用于混合SoC应用中噪声敏感低电流RF块的90nm 1.4-3.3V CMOS低差稳压器。它是基于两个环路拓扑与复制技术和一个额外的Gm-C滤波器引入复制环路高电源抑制在低和高频率。给出了完整的PSR和稳定性分析。该稳压器采用90nm CMOS技术,仅使用47nF外部输出电容,在0至30MHz范围内实现优于-60dB的PSR。这种架构是高度通用的,因为副本设计可能仍然非常基本。有源芯片面积仅为0.0088mm2,使该LDO成为局部分布式电源管理策略的理想模块。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High power supply rejection wideband Low-Dropout regulator
A 90nm 1.4-3.3V CMOS Low-Dropout regulator for noise-sensitive low-current RF blocks in mixed SoC applications is presented. It is based on a two loops topology with replica technique and an additional Gm-C filter introduced in the replica loop for high power supply rejection at both low and high frequencies. Complete PSR and stability analyses are presented. The regulator is implemented in a 90nm CMOS technology and achieves a PSR better than -60dB from 0 to 30MHz with only a 47nF external output capacitor. This architecture is highly versatile since the replica design may remain very basic. The active chip area is only 0.0088mm2, making this LDO an ideal block for a locally distributed power management strategy.
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