{"title":"一种用于10GBase-LX4以太网的50db线性幅度控制增益范围的2ghz CMOS变增益放大器","authors":"Chia-Hsin Wu, Chang-Shun Liu, Shen-luan Liu","doi":"10.1109/ISSCC.2004.1332805","DOIUrl":null,"url":null,"abstract":"A fully integrated 2 GHz variable gain amplifier is implemented in a 0.18 /spl mu/m CMOS process to achieve 50 dB linear-in-magnitude controlled-gain range for 10GBase-LX4 Ethernet. The measured dynamic range is 35 dB from 9 to 495 mVpp with BER less than 10/sup -12/. The 0.7 mm/sup 2/ chip dissipates 40 mW.","PeriodicalId":273317,"journal":{"name":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"60","resultStr":"{\"title\":\"A 2 GHz CMOS variable-gain amplifier with 50 dB linear-in-magnitude controlled gain range for 10GBase-LX4 Ethernet\",\"authors\":\"Chia-Hsin Wu, Chang-Shun Liu, Shen-luan Liu\",\"doi\":\"10.1109/ISSCC.2004.1332805\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully integrated 2 GHz variable gain amplifier is implemented in a 0.18 /spl mu/m CMOS process to achieve 50 dB linear-in-magnitude controlled-gain range for 10GBase-LX4 Ethernet. The measured dynamic range is 35 dB from 9 to 495 mVpp with BER less than 10/sup -12/. The 0.7 mm/sup 2/ chip dissipates 40 mW.\",\"PeriodicalId\":273317,\"journal\":{\"name\":\"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"60\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2004.1332805\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2004.1332805","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2 GHz CMOS variable-gain amplifier with 50 dB linear-in-magnitude controlled gain range for 10GBase-LX4 Ethernet
A fully integrated 2 GHz variable gain amplifier is implemented in a 0.18 /spl mu/m CMOS process to achieve 50 dB linear-in-magnitude controlled-gain range for 10GBase-LX4 Ethernet. The measured dynamic range is 35 dB from 9 to 495 mVpp with BER less than 10/sup -12/. The 0.7 mm/sup 2/ chip dissipates 40 mW.