用于无源成像系统的窄带低噪声放大器

Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST) Pub Date : 2013-05-02 DOI:10.1109/IBCAST.2013.6512200

G. Mehdi, Hu Anyong, Miao Jun-gang

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引用次数: 3

摘要

介绍了一种Ka波段窄带低噪声放大器模块的设计。采用GaAs pHEMT工艺制作的低噪声MMIC芯片。由于LNA是窄带的，其匹配对与键合线互连和固定连接器相关的寄生很敏感。在微带衬底上实现了由高低阻抗线组成的t型匹配网络，消除了键线的电感。设计中的平面结构在ADS Momentum®中进行了模拟，而键合线在基于FEM的全波模拟器中进行了建模。介绍了该模块的设计、组装和封装。测量结果显示，在35 GHz频率下，增益为23.5 dB。1:2的VSWR带宽为2ghz。测量噪声系数为3.5 dB。

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A narrowband low noise amplifier for passive imaging systems

The design of a narrowband low noise amplifier (LNA) module at Ka band is presented. A low noise MMIC chip fabricated in GaAs pHEMT process is employed. Since the LNA is narrowband, its matching is sensitive to parasitic associated with the bond-wire interconnects and the fixture connectors. A T-type matching network which comprises of a high-low impedance lines is realized on microstrip substrate to nullify the bond-wires inductance. The planar structures in the design are simulated in ADS Momentum® while the bond-wires are modeled in a FEM based full-wave simulator. The design, assembly and packaging of the module are described. The measured results exhibit 23.5 dB gain at 35 GHz frequency. The 1:2 VSWR bandwidth is 2 GHz. The measured noise figure is 3.5 dB.

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Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)

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