具有肖特基势垒的亚太赫兹二极管的电物理特性

2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) Pub Date : 2020-06-01 DOI:10.1109/EDM49804.2020.9153468

V. D. Moskalenko, A. Badin, D. A. Pidotova

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摘要

本文介绍了基于n-GaAs的肖特基势垒半导体结构的电物理特性和频率特性的研究结果。给出了115 ~ 257 GHz范围内的电流-电压特性和频率特性。显示了使用这种半导体结构作为亚太赫兹辐射探测器的可能性。

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Electrophysical Characteristics of Sub-THz Diode with Schottky Barrier

In the paper, the results of research of the electrophysical and frequency characteristics of semiconductor structure with a Schottky barrier based on n-GaAs are presented. Current-voltage characteristic and frequency characteristic at the range 115–257 GHz are given. The possibility of using such semiconductor structures as a detector of Sub-THz radiation is shown.

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2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)

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