选择性外延生长GaInAs量子阱中单层梯田的阶梯状生长

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328304

G. Frankowsky, T. Wacker, A. Hangleiter, D. Ottenwalder, F. Scholz

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引用次数: 0

摘要

利用空间和光谱分辨低温阴极发光技术，我们研究了选择性外延生长的GaInAs/InP量子阱。对于标称厚度为0.6 nm的量子阱，由于量子阱厚度的波动，我们观察到发光分裂成几条线。在1.75/spl倍/1.75 mm/sup /大小的模式上，我们观察到大的单层平坦梯田，大小可达90 /spl亩/平方米

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Steplike growth of monolayer terraces in GaInAs quantum wells grown by selective epitaxy

Using spatially and spectrally resolved low-temperature cathodoluminescence, we have investigated GaInAs/InP quantum wells grown by selective epitaxy. For quantum wells with a nominal thickness of 0.6 nm we observe a splitting of the luminescence into several lines due to the presence of fluctuations in the quantum well thickness. On 1.75/spl times/1.75 mm/sup 2/ sized patterns we observe large monolayer flat terraces up to a size of 90 /spl mu/m.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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