用inp -种子键合和MOVPE选择性面积生长实现硅上AlGaInAs多量子阱激光阵列

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930433

C. Besancon, N. Vaissière, D. Néel, H. Mehdi, G. Lefévre, V. Muffato, L. Sanchez, F. Fournel, C. Dupré, F. Bassani, J. Decobert

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引用次数: 0

摘要

我们提出了一种选择性生长的AlGaInAs多量子阱激光阵列，通过InP种子键合和MOVPE选择性面积生长在硅上，覆盖了155 nm的C+L波段。

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AlGaInAs Multi-Quantum Well Laser Array on Silicon Achieved by InP-Seed-Bonding and MOVPE Selective Area Growth

We present a selectively grown AlGaInAs Multi-Quantum Well laser array on silicon covering a 155 nm range over the C+L band achieved by InP seed bonding and MOVPE Selective Area Growth.

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2022 Compound Semiconductor Week (CSW)

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