Self-Organizing Process Of Moderately Strained Zn/sub 1-x/CdxSe Layer Grown On GaAs

Fabrication of semiconductor nanostructures such as quantum wires and quantum dots is very important for realization of new functional quantum devices. Among the various methods, a self-organization technique using the Stranski-Krastanow (S-K) growth mode in strained system has received great interest because high quality nano-scaled islands can be easily formed by epitaxial growth without any minute lithographic processes. However, since the spatial distributions of these islands are random, it is difficult to obtain a precise control of characteristics of the device. Several groups have attempted to control the islands to be linearly ordered. However, only irregular short-range arrays (less than 1 pm) were obtained [1,2].