正常关断GaN-on-Si金属绝缘体-半导体场效应晶体管，在200°C下具有600 v阻断能力

2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI:10.1109/ISPSD.2012.6229067

R. Chu, D. Brown, D. Zehnder, Xu Chen, A. Williams, R. Li, M. Chen, S. Newell, K. Boutros

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引用次数: 14

摘要

我们报道了一种GaN-on-Si金属绝缘体-半导体场效应晶体管(MISFET)，在200°C温度下具有正常关闭和600 v阻断能力。讨论了阈值电压、导通电阻和泄漏特性的温度依赖性。

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Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200 °C

We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200 °C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.

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2012 24th International Symposium on Power Semiconductor Devices and ICs

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