Switching losses in a new high-voltage MOSFETs

The paper presents a description of switching energy losses in high-voltage MOSFET operating in a bridge topology. Energy losses in both hard and soft switching, as well as during switching on at light load current and in unloaded operation have been analyzed. The description has accounted for the effect of parasitic junction capacitances and the external capacitances of semiconductor elements, as well as the parasitic capacitance of the receiver. For deriving the relationships defining the MOSTET energy losses, the electric charge and energy conservation principle was used. The second part of the paper describes the results of simulation and experimental studies performed on the model of a dual active bridge with high-voltage MOSFETs. The obtained results are coincident with the theoretical calculation results, thereby confirming the correctness of the performed analysis.