高容量差分扩展可逆水印中的多比特与多电平嵌入

D. Coltuc, Adrian Tudoroiu
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引用次数: 20

摘要

经典的差分扩展(DE)可逆水印为了嵌入1位数据,将差分扩展两倍。这种DE方案在单个嵌入层中的上限通常以1bpp为界。为了获得大于1bpp的嵌入,将多个嵌入阶段串联起来。为了嵌入到log2n bpp,多比特DE方案扩展了n倍的差异。提出了一种差分展开可逆水印的多比特扩展方法,并与多级嵌入情况进行了比较。多比特可逆水印在容量和质量上都优于多电平水印。给出了在标准测试图像上的实验结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multibit versus multilevel embedding in high capacity difference expansion reversible watermarking
The classical difference expansion (DE) reversible watermarking expands two times a difference in order to embed one bit of data. The upper limit of such DE schemes in a single embedding level is usually bounded by 1 bpp. In order to obtain more than 1 bpp, several embedding stages are chained. The multibit DE schemes expand n times the difference in order to embed up to log2 n bpp. This paper proposes a multibit extension of the difference expansion reversible watermarking and compares the results with the multilevel embedding case. The multibit reversible watermarking outperforms the multilevel one both in capacity and quality. Experimental results on standard test images are provided.
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