利用横向读取来纠正域壁存储器中的对齐错误

S. Ollivier, Donald Kline, Kawsher A. Roxy, R. Melhem, S. Bhanja, A. Jones
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引用次数: 16

摘要

自旋电子畴壁存储器(DWMs)容易出现对准错误,传统的纠错技术无法保护这些错误。为了解决这个问题,我们提出了一种新的技术,称为派生纠错编码(DECC)。根据需要,我们使用新颖的横向读取(TR)从DWM的数据和移位状态构建元数据。TR以正交方向读取到DWM接入点,并且可以确定DWM中接入点的数量。元数据中的错误对应于DWM中的移位错误。它不是存储元数据,而是按需创建,并通过存储奇偶校验位进行保护。使用ECC修复元数据可以恢复DWM对齐并确保正确操作。通过这些技术,我们的位移感知纠错方法提供了超过15年的使用寿命,具有类似的性能,同时与最先进的32位纳米线相比,面积和能量分别减少了370%和52%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Leveraging Transverse Reads to Correct Alignment Faults in Domain Wall Memories
Spintronic domain wall memories (DWMs) are prone to alignment faults, which cannot be protected by traditional error correction techniques. To solve this problem, we propose a new technique called derived error correction coding (DECC). We construct metadata from the data and shift state of the DWM, on demand, using a novel transverse read (TR). TR reads in an orthogonal direction to the DWM access point and can determine the number of ones in a DWM. Errors in the metadata correspond to shift-faults in the DWM. Rather than storing the metadata, it is created on-demand and protected by storing parity bits. Repairing the metadata with ECC allows restoration of DWM alignment and ensures correct operation. Through these techniques, our shift-aware error correction approaches provide a lifetime of over 15 years with a similar performance, while reducing area and energy by 370% and 52%, versus the state-of-the-art, for a 32-bit nanowire.
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