{"title":"高压亚胺扫描晶体管驱动电路设计的考虑","authors":"M. J. Maytum, A. Lear","doi":"10.1109/TBTR1.1973.299731","DOIUrl":null,"url":null,"abstract":"Advances in technology have made available Silicon High Voltage Transistors for use in television line scan applications. The basic structure of such-devices is discussed comparing with conventional low voltage power devices showing the dominance of the high voltage devices collector region. It will be skhown how this large collector volume impacts on the common emitter characteristics, reducing gain, and the switching characteristics, due to the large amounts of collector stored charge.","PeriodicalId":426905,"journal":{"name":"IEEE Transactions on Broadcast and Television Receivers","volume":"115 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1973-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Driver-Circuit Design Considerations for High=Voltage Linen-Scan Transistor\",\"authors\":\"M. J. Maytum, A. Lear\",\"doi\":\"10.1109/TBTR1.1973.299731\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Advances in technology have made available Silicon High Voltage Transistors for use in television line scan applications. The basic structure of such-devices is discussed comparing with conventional low voltage power devices showing the dominance of the high voltage devices collector region. It will be skhown how this large collector volume impacts on the common emitter characteristics, reducing gain, and the switching characteristics, due to the large amounts of collector stored charge.\",\"PeriodicalId\":426905,\"journal\":{\"name\":\"IEEE Transactions on Broadcast and Television Receivers\",\"volume\":\"115 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1973-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Broadcast and Television Receivers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TBTR1.1973.299731\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Broadcast and Television Receivers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TBTR1.1973.299731","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Driver-Circuit Design Considerations for High=Voltage Linen-Scan Transistor
Advances in technology have made available Silicon High Voltage Transistors for use in television line scan applications. The basic structure of such-devices is discussed comparing with conventional low voltage power devices showing the dominance of the high voltage devices collector region. It will be skhown how this large collector volume impacts on the common emitter characteristics, reducing gain, and the switching characteristics, due to the large amounts of collector stored charge.