2-18 GHz，高效率，中功率GaAs场效应管放大器

1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI:10.1109/MWSYM.1981.1129810

S. Nelson, H. Macksey

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引用次数: 4

摘要

使用600 μ m栅极宽度器件的GaAs FET放大器在2至18 GHz范围内实现了~ 300 mW的输出，功率增加效率为20-25%。使用1350 μ m的场效应管，在7 ~ 16.5 GHz范围内获得0.5 W的输出功率。将其大信号性能扩展到2ghz似乎是可行的。

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2-18 GHz, High-Efficiency, Medium-Power GaAs FET Amplifiers

A GaAs FET amplifier using a 600 mu m gate width device has achieved ~ 300 mW output with 20-25% power-added efficiency across 2 to 18 GHz. With a 1350 mu m FET, 0.5 W output power was obtained from 7 to 16.5 GHz. Extending its large-signal performance to 2 GHz appears feasible.

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1981 IEEE MTT-S International Microwave Symposium Digest

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