具有低暗漏电流的屏蔽A - si TFT

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-18 DOI:10.1109/ASID.1999.762721

Y. Chen, Jr-Hong Chen, Y. Tai

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引用次数: 2

摘要

研制了一种具有低暗漏电流的非晶硅薄膜晶体管(TFT)。该TFT的a-Si:H岛边缘被选择性氧化，而不影响金属/n/sup +/ a-Si:H层的接触质量，因此通过该边缘的寄生金属/本构a-Si:H接触的空穴电流可以被阻挡。利用该技术，可以实现有效迁移率为0.7 cm/sup 2//Vsec，亚阈值摆幅为0.55 V/dec，阈值电压为1.5 V的TFT。此外，在负栅极偏置为-10 V，漏极电压为10 V时，TFT的漏电流低至0.5 pA。

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A light-shield a-Si TFT with low dark-leakage currents

A light-shield amorphous silicon (a-Si:H) thin film transistor (TFT) with low dark leakage current is developed. The a-Si:H island edge of this TFT is selectively oxidized without affecting the metal/n/sup +/ a-Si:H layer contact quality, and thus the hole current flowing through the parasitic metal/intrinsic a-Si:H contact at that edge can be blocked. Using this technique, the TFT with effective mobility of 0.7 cm/sup 2//Vsec, subthreshold swing of 0.55 V/dec, and threshold voltage of 1.5 V can be achieved. In addition, the leakage current of the TFT is as low as 0.5 pA at high negative gate bias of -10 V and drain voltage of 10 V.

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Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)

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