{"title":"功率晶体管关断动力学模型","authors":"C. Hu, M. J. Model","doi":"10.1109/PESC.1980.7089437","DOIUrl":null,"url":null,"abstract":"A theoretical model of npvn power transistor turn-off transients oriented toward circuit analysis is presented. It predicts the collector voltage waveforms under constant collector and reverse base currents in closed-form expressions. In particular, a storage period, a voltage-rise period and their dependence on currents and device parameters are revealed. It also provides a conceptual one-dimensional model for the physical processes of switching turn-off.","PeriodicalId":227481,"journal":{"name":"1980 IEEE Power Electronics Specialists Conference","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A model of power transistor turn-off dynamics\",\"authors\":\"C. Hu, M. J. Model\",\"doi\":\"10.1109/PESC.1980.7089437\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A theoretical model of npvn power transistor turn-off transients oriented toward circuit analysis is presented. It predicts the collector voltage waveforms under constant collector and reverse base currents in closed-form expressions. In particular, a storage period, a voltage-rise period and their dependence on currents and device parameters are revealed. It also provides a conceptual one-dimensional model for the physical processes of switching turn-off.\",\"PeriodicalId\":227481,\"journal\":{\"name\":\"1980 IEEE Power Electronics Specialists Conference\",\"volume\":\"108 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1980-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1980.7089437\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1980.7089437","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A theoretical model of npvn power transistor turn-off transients oriented toward circuit analysis is presented. It predicts the collector voltage waveforms under constant collector and reverse base currents in closed-form expressions. In particular, a storage period, a voltage-rise period and their dependence on currents and device parameters are revealed. It also provides a conceptual one-dimensional model for the physical processes of switching turn-off.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
