高能电子束光刻工艺模拟

2013 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale Pub Date : 2013-08-01 DOI:10.1109/3M-NANO.2013.6737408

Q. Gan, Zaifa Zhou, Jiang-Yong Pan

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引用次数: 2

摘要

本文提出了电子束光刻的模型。该模型包括弹性截面、非弹性截面、能量损失率模型和蚀刻率模型。弹性截面采用Rutherford截面和Browning’s Mott截面。对于非弹性截面，采用Moller截面和Gryzinsky截面。为了计算能量损失率，我们使用了不同形式的贝特公式。蚀刻速率模型用于计算蚀刻速率。采用蒙特卡罗方法对PMMA电阻进行了仿真。通过仿真得到了不同的发展概况。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-energy electron beam lithography process simulation

In this paper, we present the model of electron beam lithography. This model includes elastic cross section, inelastic cross section, energy-loss rate model and etch rate model. For elastic cross section, Rutherford cross section and Browning's Mott cross section are adopted. For inelastic cross section, Moller cross section and Gryzinsky cross section are used. To calculate energy-loss rate, we use different forms of Bethe formulas. The etch rate model is used to calculate the etch rate. The simulation is implemented with Monte Carlo method for PMMA resist. Various development profiles are obtained through the simulation.

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来源期刊

2013 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale

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