{"title":"用OGMOSFET设计窄带LNA进行噪声和增益分析","authors":"G. Phade, Sandhya Save, Vivek Ratnapakhari","doi":"10.1145/2909067.2909084","DOIUrl":null,"url":null,"abstract":"LNA is the first building block of any receiver circuit. In this paper, a narrow band LNA operating at 2.4 GHz is designed in ADS CAD tool. Device used for LNA design is Optically Gated MOSFET (OGMOSFET). For DC bias, gate voltage is 1.5 V and drain voltage is 2V. Gain and noise analysis of the amplifier is carried out under dark and illumination. It is observed that noise is lowered and gain is improved under illumination as that of dark which are expected characteristics of any LNA.","PeriodicalId":371590,"journal":{"name":"Women In Research","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Narrow Band LNA Design Using OGMOSFET for Noise and Gain Analysis\",\"authors\":\"G. Phade, Sandhya Save, Vivek Ratnapakhari\",\"doi\":\"10.1145/2909067.2909084\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"LNA is the first building block of any receiver circuit. In this paper, a narrow band LNA operating at 2.4 GHz is designed in ADS CAD tool. Device used for LNA design is Optically Gated MOSFET (OGMOSFET). For DC bias, gate voltage is 1.5 V and drain voltage is 2V. Gain and noise analysis of the amplifier is carried out under dark and illumination. It is observed that noise is lowered and gain is improved under illumination as that of dark which are expected characteristics of any LNA.\",\"PeriodicalId\":371590,\"journal\":{\"name\":\"Women In Research\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Women In Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/2909067.2909084\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Women In Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2909067.2909084","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Narrow Band LNA Design Using OGMOSFET for Noise and Gain Analysis
LNA is the first building block of any receiver circuit. In this paper, a narrow band LNA operating at 2.4 GHz is designed in ADS CAD tool. Device used for LNA design is Optically Gated MOSFET (OGMOSFET). For DC bias, gate voltage is 1.5 V and drain voltage is 2V. Gain and noise analysis of the amplifier is carried out under dark and illumination. It is observed that noise is lowered and gain is improved under illumination as that of dark which are expected characteristics of any LNA.
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