V. K. Chaubey, R. Rastogi, Arun Kumar, B. Kumar, Aryan Kannaujiya
{"title":"利用PZT和PMN铁电材料改善双堆叠nfet的阈值电压和泄漏电流","authors":"V. K. Chaubey, R. Rastogi, Arun Kumar, B. Kumar, Aryan Kannaujiya","doi":"10.1109/ICTACS56270.2022.9988069","DOIUrl":null,"url":null,"abstract":"This brief is reporting a novel device configuration of negative capacitance field effect transistor with PMN and PZT stacked ferroelectric materials. It has been found that double stacked NCFET has better electrical characteristics than conventional NCFET. Implanting different gate metal significantly affect the threshold voltage and leakage current. Stacked NCFET has improved threshold voltage and less leakage current than that of conventional NCFET. Collective dielectric property of PMN and PZT holds a reason for better performance of stacked NCFET.","PeriodicalId":385163,"journal":{"name":"2022 2nd International Conference on Technological Advancements in Computational Sciences (ICTACS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement in Threshold Voltage and Leakage Current in Double Stacked NCFET Using PZT and PMN Ferroelectric Materials\",\"authors\":\"V. K. Chaubey, R. Rastogi, Arun Kumar, B. Kumar, Aryan Kannaujiya\",\"doi\":\"10.1109/ICTACS56270.2022.9988069\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This brief is reporting a novel device configuration of negative capacitance field effect transistor with PMN and PZT stacked ferroelectric materials. It has been found that double stacked NCFET has better electrical characteristics than conventional NCFET. Implanting different gate metal significantly affect the threshold voltage and leakage current. Stacked NCFET has improved threshold voltage and less leakage current than that of conventional NCFET. Collective dielectric property of PMN and PZT holds a reason for better performance of stacked NCFET.\",\"PeriodicalId\":385163,\"journal\":{\"name\":\"2022 2nd International Conference on Technological Advancements in Computational Sciences (ICTACS)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 2nd International Conference on Technological Advancements in Computational Sciences (ICTACS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTACS56270.2022.9988069\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 2nd International Conference on Technological Advancements in Computational Sciences (ICTACS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTACS56270.2022.9988069","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improvement in Threshold Voltage and Leakage Current in Double Stacked NCFET Using PZT and PMN Ferroelectric Materials
This brief is reporting a novel device configuration of negative capacitance field effect transistor with PMN and PZT stacked ferroelectric materials. It has been found that double stacked NCFET has better electrical characteristics than conventional NCFET. Implanting different gate metal significantly affect the threshold voltage and leakage current. Stacked NCFET has improved threshold voltage and less leakage current than that of conventional NCFET. Collective dielectric property of PMN and PZT holds a reason for better performance of stacked NCFET.