利用PZT和PMN铁电材料改善双堆叠nfet的阈值电压和泄漏电流

V. K. Chaubey, R. Rastogi, Arun Kumar, B. Kumar, Aryan Kannaujiya
{"title":"利用PZT和PMN铁电材料改善双堆叠nfet的阈值电压和泄漏电流","authors":"V. K. Chaubey, R. Rastogi, Arun Kumar, B. Kumar, Aryan Kannaujiya","doi":"10.1109/ICTACS56270.2022.9988069","DOIUrl":null,"url":null,"abstract":"This brief is reporting a novel device configuration of negative capacitance field effect transistor with PMN and PZT stacked ferroelectric materials. It has been found that double stacked NCFET has better electrical characteristics than conventional NCFET. Implanting different gate metal significantly affect the threshold voltage and leakage current. Stacked NCFET has improved threshold voltage and less leakage current than that of conventional NCFET. Collective dielectric property of PMN and PZT holds a reason for better performance of stacked NCFET.","PeriodicalId":385163,"journal":{"name":"2022 2nd International Conference on Technological Advancements in Computational Sciences (ICTACS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement in Threshold Voltage and Leakage Current in Double Stacked NCFET Using PZT and PMN Ferroelectric Materials\",\"authors\":\"V. K. Chaubey, R. Rastogi, Arun Kumar, B. Kumar, Aryan Kannaujiya\",\"doi\":\"10.1109/ICTACS56270.2022.9988069\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This brief is reporting a novel device configuration of negative capacitance field effect transistor with PMN and PZT stacked ferroelectric materials. It has been found that double stacked NCFET has better electrical characteristics than conventional NCFET. Implanting different gate metal significantly affect the threshold voltage and leakage current. Stacked NCFET has improved threshold voltage and less leakage current than that of conventional NCFET. Collective dielectric property of PMN and PZT holds a reason for better performance of stacked NCFET.\",\"PeriodicalId\":385163,\"journal\":{\"name\":\"2022 2nd International Conference on Technological Advancements in Computational Sciences (ICTACS)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 2nd International Conference on Technological Advancements in Computational Sciences (ICTACS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTACS56270.2022.9988069\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 2nd International Conference on Technological Advancements in Computational Sciences (ICTACS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTACS56270.2022.9988069","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文报道了一种新颖的负电容场效应晶体管器件结构,该器件采用PMN和PZT堆叠铁电材料。研究发现,与传统的NCFET相比,双堆叠NCFET具有更好的电特性。不同栅极金属的植入对阈值电压和漏电流有显著影响。与传统NCFET相比,堆叠NCFET具有更高的阈值电压和更小的泄漏电流。PMN和PZT的集体介电特性是堆叠NCFET性能更好的原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improvement in Threshold Voltage and Leakage Current in Double Stacked NCFET Using PZT and PMN Ferroelectric Materials
This brief is reporting a novel device configuration of negative capacitance field effect transistor with PMN and PZT stacked ferroelectric materials. It has been found that double stacked NCFET has better electrical characteristics than conventional NCFET. Implanting different gate metal significantly affect the threshold voltage and leakage current. Stacked NCFET has improved threshold voltage and less leakage current than that of conventional NCFET. Collective dielectric property of PMN and PZT holds a reason for better performance of stacked NCFET.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信