光谱空穴燃烧中Sm2+ 5D2→7F0的电子跃迁过程

Hongwei Song, Jiahua Zhang, Shi-hua Huang, Jiaqi Yu
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引用次数: 0

摘要

自1985年A. Winnaker等首次在2K下观察到BaFCl:Sm2+中持续光谱烧孔以来,MyM ' 1- yfclxbr1 -x:Sm2+材料被广泛应用于光谱烧孔。此后,在77K[2]条件下,在SrFCl和Mg0.5Sr0.5FCl0.5Br0.5:Sm2+条件下,相继报道了BaFCl0.5Br0.5:Sm2+条件下的烧孔[3,4]。近年来也报道了氟铪酸盐玻璃中Sm2+的室温孔烧[5,6]。这些材料在高温烧孔方面有潜在的用途。但与有机材料相比,它们具有较低的烧孔效率和较窄的非均匀线宽度。为了在频域光存储中应用光谱烧孔,必须对这些材料进行改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electron transition process of 5D2→7F0 of Sm2+ in spectral hole-burning
Materials of MyM’1-yFClxBr1-x:Sm2+ have been widely applied in spectral hole-burning since the first observation of persistent spectral hole-burning in BaFCl:Sm2+ at 2K was reported by A. Winnaker, etc. in 1985[1]. From then on, hole-burning in BaFCl0.5Br0.5:Sm2+ at 77K[2] in SrFCl and Mg0.5Sr0.5FCl0.5Br0.5:Sm2+ at room temperature[3, 4] were reported. Room temperature hole-buring of Sm2+ in fluorohafnate glasses[5,6] were reported in recent years also. These materials are of potential use in high temperature hole- burning. But comparing to organic materials, they have lower hole- burning efficiency and narrower inhomogenous line width. In order to apply spetral hole- buring in frequency domain optical storage, it is important to improve these materials.
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