C. Yeh, J. Luo, L. Lewicki, K.W. Hwang, C. Huang, H. Chen, C. Kao, R. Mendel
{"title":"用于混合信号设计的紧凑MOSFET建模","authors":"C. Yeh, J. Luo, L. Lewicki, K.W. Hwang, C. Huang, H. Chen, C. Kao, R. Mendel","doi":"10.1109/SOUTHC.1996.535096","DOIUrl":null,"url":null,"abstract":"In this paper, the requirements of a good compact MOSFET model for mixed-signal design are discussed. The model accuracy criteria based on the circuit designer's perspective are given. The issues of statistical modeling, model implementation in a circuit simulator and mixed-signal process characterization are also addressed.","PeriodicalId":199600,"journal":{"name":"Southcon/96 Conference Record","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Compact MOSFET modeling for mixed-signal design\",\"authors\":\"C. Yeh, J. Luo, L. Lewicki, K.W. Hwang, C. Huang, H. Chen, C. Kao, R. Mendel\",\"doi\":\"10.1109/SOUTHC.1996.535096\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the requirements of a good compact MOSFET model for mixed-signal design are discussed. The model accuracy criteria based on the circuit designer's perspective are given. The issues of statistical modeling, model implementation in a circuit simulator and mixed-signal process characterization are also addressed.\",\"PeriodicalId\":199600,\"journal\":{\"name\":\"Southcon/96 Conference Record\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-06-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Southcon/96 Conference Record\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOUTHC.1996.535096\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Southcon/96 Conference Record","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOUTHC.1996.535096","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, the requirements of a good compact MOSFET model for mixed-signal design are discussed. The model accuracy criteria based on the circuit designer's perspective are given. The issues of statistical modeling, model implementation in a circuit simulator and mixed-signal process characterization are also addressed.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
