Zno/Ag纳米粒子修饰多孔半导体纳米结构基质的研究

A. Belorus, Daniyar Sherimov, Koshevoi L. Veniamin, Pleshanov M. Ilya
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引用次数: 0

摘要

目的。在这项工作中,我们研究了用银和ZnO纳米粒子修饰多孔硅的可能性。在氢氟酸溶液中采用电化学蚀刻法合成衬底。根据SEM数据,确定其孔径为d = 50-100 nm,层厚为25 μm。通过EMP分析,研究了多孔纳米结构的组成,证实其表面存在尺寸为1 μ m的ZnO纳米颗粒。研究结果证明了电热方法在多孔硅基体中引入纳米颗粒的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of Nanostructured Matrices of Porous Semiconductors Modified by Zno/Ag Nanoparticles
Purpose. In this work, we investigated the possibility of modifying porous silicon with silver and ZnO nanoparticles. For the synthesis of substrates was used the method of electrochemical etching in hydrofluoric acid solutions. According to SEM data, it was established that the pore size is d = 50-100 nm, the layer thickness is 25 μm. By means of EMP analysis, a composition of porous nanostructures has been investigated, confirming the presence of ZnO nanoparticles with size of 1 µm on its surface. As a result of research work demonstrated the effectiveness of the electro-thermal methods for introducing nanoparticles into the porous silicon matrix.
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