光泵浦全外延晶片熔合1.52-/spl μ m垂直腔激光器

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328234

D. Babic, J. J. Dudley, K. Streubel, R. Mirin, E. Hu, J. Bowers

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引用次数: 1

摘要

我们首次利用光泵浦实现了工作在1.52 /spl μ m的全外延垂直腔激光器的工作。利用晶圆融合技术，将mocvd生长的InGaAsP/InP反射镜与mbe生长的AlAs/GaAs反射镜结合形成激光腔。活性区为1.55 /spl mu/m的InGaAsP层，厚度为2/spl lambda/。观察了等距模距为1 nm的多横模激光操作。激光器结构在高达35/spl°c的热沉温度下工作

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Optically-pumped all-epitaxial wafer-fused 1.52-/spl mu/m vertical-cavity lasers

We demonstrate for the first time the operation of all-epitaxial vertical cavity lasers operating at 1.52 /spl mu/m using optical pumping. The laser cavity is formed by bonding an MOCVD-grown InGaAsP/InP mirror to an MBE-grown AlAs/GaAs mirror using the wafer fusion technique. The active region is a bulk 1.55 /spl mu/m InGaAsP layer of thickness 2/spl lambda/. Multiple transverse mode laser operation with equidistant mode separations of 1 nm was observed. The laser structure operated at heat sink temperatures as high as 35/spl deg/C.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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