不同TiO2浓度对PMMA:TiO2薄膜介电性能和物理性能的影响

L. N. Ismail, S. A. Farahiyah, Z. Habibah, S. H. Herman, M. Rusop
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引用次数: 10

摘要

本研究旨在研究PMMA: TiO2纳米复合薄膜的介电性能。TiO2的浓度分别为0wt%、1wt%、2wt%、3wt%。结果表明:PMMA: TiO2纳米复合薄膜的介电性能受PMMA溶液中TiO2浓度的影响。当浓度为3wt%时,薄膜的介电常数较高,为8.04。电容结果表明,加入TiO2后,其电容值高于纯PMMA,其中纯PMMA约为0.004nF。而对于介质损耗,3wt% 0.06的薄膜比其他浓度的薄膜要低。FESEM图像表明,所有纳米复合薄膜表面都具有多孔性。TiO2浓度越大,孔隙率越高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dielectric and physical properties of PMMA:TiO2 thin films by varying TiO2 concentration
This research is to investigate the dielectric properties of PMMA: TiO2 nanocomposite thin films. The experiments are conducted by varying the TiO2 concentration from 0wt%, 1wt%, 2wt%, 3wt%. The results indicate that dielectric properties of PMMA: TiO2 nanocomposite thin film is affected by the amount of TiO2 concentration added into PMMA solution. The thin film with 3wt% indicate the higher dielectric constant with value 8.04 compare to others concentration. The capacitance result shows that when TiO2 are added its capacitance value is above pure PMMA where pure PMMA is about 0.004nF. However, for dielectric loss, it shows that the 3wt% thin film with value of 0.06 is lower than other concentrations. The FESEM images show that all the nanocomposite thin films have a porous surface. High porosity is obtained when the amount TiO2 concentration is increased.
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