任意掺杂n-Si中量子线的电子能谱

V. Grimalsky, S. Koshevaya, J. Escobedo-A., I. Moroz
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引用次数: 0

摘要

用Thomas - Fermi (TF)方法计算了在有限温度下掺杂$n$ si量子线中的电子能谱。考虑了多体交换修正。兴奋剂配置文件是任意的。在第一阶段,从一个简单的二维方程计算电子势能。在此基础上提出了有效的迭代方案。然后根据Schrödinger方程对能量子能级和波函数进行了模拟。利用线性谐振子的本征函数展开。量子力学摄动理论对较低能量子能级给出了良好的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The Electron Spectrum of Quantum Wires in n-Si of Arbitrarily Doping Profile
Electron spectrum in doped $n$-Si quantum wires is calculated by the Thomas – Fermi (TF) method under finite temperatures. The many-body exchange corrections are taken into account. The doping profile is arbitrary. At the first stage the electron potential energy is calculated from a simple two-dimensional equation. The effective iteration scheme is proposed there. Then the energy sub-levels and wave functions are simulated from the Schrödinger equation. The expansion by the eigenfunctions of the linear harmonic oscillator is used. The quantum mechanical perturbation theory yields goods results for the lower energy sub-levels.
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