An Accurate and Stable Finite Element Method for Self-Heating Effects Simulation of Semiconductor Devices

In this paper, an accurate and stable control volume finite element method with Scharfetter-Gummel upwind effects (CVFEM-SG) has been employed to numerically simulate the self-heating effects of semiconductor devices. The thermodynamic drift-diffusion model is utilized to model the self-heating effects. The numerical experiments show that the proposed approach is accurate and robust while alleviates the requirement on the quality of the mesh compared with the traditional finite volume method.