K. Babich, N. Fukiage, A. Mahorowala, S. Halle, T. Bunner, D. Pfeiffer, H. Mochiki, S. Ashigaki, A. Xia, M. Angelopoulos
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A novel graded antireflective coating with built-in hardmask properties enabling 65nm and below CMOS device patterning
Novel silicon carbide (Si:C:H) and silicon oxycarbide (Si:C:O:H) based materials, prepared by plasma-enhanced chemical vapor deposition (PECVD), have been developed with dual anti-reflective (ARC) and hardmask properties thus enabling the use of thin resists for high resolution device pattering. High quality 25 nm polysilicon gates and ultra-high aspect ratio (>65:1) 8 /spl mu/m deep trench (DT) features in Si have been fabricated with this ARC/hardmask technology.
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