使用混合结构通道的双栅极无结栅极-全能(JL-GAA)场效应管

Caleb Meriga, Ravi Teja Ponnuri, B. Vamsi Krishna, Shaik Saidulu, M. Durga Prakesh
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引用次数: 2

摘要

在这项工作中,提出了混合结构通道的概念,以减少短通道效应(SCE),同时仍然允许大电流通过通道。采用两种不同的混合结构通道(即同心圆柱形和锯齿形结构),比较了5nm双栅无结栅极全能(JL-GAA)场效应管。得到并分析了两种混合结构的性能特点。锯齿形结构通道具有较高的电导率,狄拉克点恒定,输出电导率比同心圆柱形结构通道高220%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dual Gate Junctionless Gate-All-Around (JL-GAA) FETs using Hybrid Structured Channels
In this work, the concept of hybrid structured channel is proposed to reduce the short channel effect (SCE), while still permitting high current through the channel. 5nm Dual gate junctionless gate-all-around (JL-GAA) FET using two different hybrid structured channels (i.e. concentric cylindrical and zigzag structures) were compared. The performance characteristics of the two hybrid structures were attained and analyzed. The zigzag structured channel showed to have higher conductivity, constant Dirac point, high output conductance of ~220% more than concentric cylindrical structured channel.
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