高纹波电流电感DC-DC变换器中SiC mosfet的功率损耗分析

2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) Pub Date : 2023-07-03 DOI:10.1109/SMACD58065.2023.10192180

N. Femia, Hamidreza Jafarian, G. D. Capua

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引用次数: 0

摘要

本文讨论了DC-DC变换器中碳化硅(SiC) mosfet功率损耗分析的行为模型，重点讨论了电感饱和和峰值纹波电流的影响。通过使用符号定义的设备，所有模型都在PathWave ADS软件中实现。一个PV-MPPT DC-DC升压变换器被认为是一个参考案例研究。结果证实了在大峰峰纹波和功率电感部分饱和情况下工作的优势。

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Power Losses Analysis of SiC MOSFETs in DC-DC Converters with High-Ripple-Current Inductors

This paper discusses behavioral models for power losses analysis of Silicon Carbide (SiC) MOSFETs in DC-DC converters, with emphasis on the impact of inductor saturation and peak-peak ripple current. All models are implemented in PathWave ADS software, by using symbolically defined devices. A PV-MPPT DC-DC boost converter is considered as a reference case study. The results confirm the advantages of working with large peak-peak ripple and partial saturation of power inductors.

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2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)

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