微波环境下SiGe异质结隧道场效应晶体管的小信号等效电路分析

2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama) Pub Date : 2018-08-01 DOI:10.23919/PIERS.2018.8598056

Y. Jung, I. Kang, Seongjae Cho

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引用次数: 0

摘要

在本研究中，Si1-xGex作为隧道场效应晶体管(TFET)的源结材料，并从射频(RF)性能的角度对该器件进行了分析。采用射频域高精度的小信号等效电路，在600 GHz时电容误差和跨导误差被有效地抑制在11%以下。

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Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit

In this study, Si1-xGex is used as the source junction material in a tunneling field-effect transistor (TFET)and the device is analyzed in the perspectives of radio-frequency (RF)performances. Using the small-signal equivalent circuit with high accuracy in the RF domain, the errors in capacitances and transconductances have been effectively suppressed below 11 % at 600 GHz.

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2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama)

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