在4.2-77 K范围内监测和控制IC温度的另一种方法

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194459

E. Gutiérrez-D., J. De la Hidalga-W, M. Deen, S. Koshevaya

{"title":"在4.2-77 K范围内监测和控制IC温度的另一种方法","authors":"E. Gutiérrez-D., J. De la Hidalga-W, M. Deen, S. Koshevaya","doi":"10.1109/ESSDERC.1997.194459","DOIUrl":null,"url":null,"abstract":"We introduce an alternative to the diode-method to monitor and control the local temperature in CMOS integrated circuits operated at cryogenic temperatures. We use an n-MOS transistor as a thermometer and prove that it has a linear performance in the 4.2 77 K temperature range. The method has been validated with a CMOS inverter fabricated in a 0.7 μm CMOS technology.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"An alternative method to monitor and control the IC temperature in the 4.2-77 K range\",\"authors\":\"E. Gutiérrez-D., J. De la Hidalga-W, M. Deen, S. Koshevaya\",\"doi\":\"10.1109/ESSDERC.1997.194459\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We introduce an alternative to the diode-method to monitor and control the local temperature in CMOS integrated circuits operated at cryogenic temperatures. We use an n-MOS transistor as a thermometer and prove that it has a linear performance in the 4.2 77 K temperature range. The method has been validated with a CMOS inverter fabricated in a 0.7 μm CMOS technology.\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194459\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194459","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

我们介绍了一种替代二极管方法来监测和控制在低温下工作的CMOS集成电路的局部温度。我们使用n-MOS晶体管作为温度计，并证明它在4.2 - 77 K温度范围内具有线性性能。该方法已在0.7 μm CMOS工艺的CMOS逆变器上得到验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

An alternative method to monitor and control the IC temperature in the 4.2-77 K range

We introduce an alternative to the diode-method to monitor and control the local temperature in CMOS integrated circuits operated at cryogenic temperatures. We use an n-MOS transistor as a thermometer and prove that it has a linear performance in the 4.2 77 K temperature range. The method has been validated with a CMOS inverter fabricated in a 0.7 μm CMOS technology.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

27th European Solid-State Device Research Conference

自引率

0.00%

发文量