基于65nm CMOS双模谐振器的低相位噪声宽调谐范围f类压控振荡器

Naushad Dhamani, Paria Sepidband, K. Entesari
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引用次数: 1

摘要

本文提出了一种采用双模谐振腔的低相位噪声宽调谐范围f类压控振荡器。与其他传统的宽带振荡器相比,所提出的电容/电感耦合谐振器将集成f类电压控制振荡器和双模开关网络的优点,以同时获得低相位噪声和宽调谐范围。该结构采用台积电65nm CMOS技术,具有2.14-4.22GHz的连续调谐范围,在2.3GHz时相位噪声优值(FoM)为192.7dB,在整个工作频率范围内优于188dB。振荡器从0.6V电源消耗15-16.4mW,占用0.7mm2的有效面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A low phase noise wide-tuning range class-F VCO based on a dual-mode resonator in 65nm CMOS
This paper presents a low phase noise wide tuning range Class-F voltage controlled oscillator using a dual-mode resonator. In comparison to other conventional wideband oscillators the proposed capacitively/inductively-coupled resonator will integrate the benefits of Class-F voltage control oscillators and dual-mode switching networks to obtain simultaneous low phase noise and wide-tuning range. The proposed structure prototyped in a 65nm TSMC CMOS technology, shows a 2.14–4.22GHz continuous tuning range, phase noise figure-of-merit (FoM) of 192.7dB at 2.3GHz and better than 188dB across the entire operating frequency range. The oscillator consumes 15–16.4mW from a 0.6V supply and occupies an active area of 0.7mm2.
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