{"title":"基于65nm CMOS双模谐振器的低相位噪声宽调谐范围f类压控振荡器","authors":"Naushad Dhamani, Paria Sepidband, K. Entesari","doi":"10.1109/RWS.2018.8305009","DOIUrl":null,"url":null,"abstract":"This paper presents a low phase noise wide tuning range Class-F voltage controlled oscillator using a dual-mode resonator. In comparison to other conventional wideband oscillators the proposed capacitively/inductively-coupled resonator will integrate the benefits of Class-F voltage control oscillators and dual-mode switching networks to obtain simultaneous low phase noise and wide-tuning range. The proposed structure prototyped in a 65nm TSMC CMOS technology, shows a 2.14–4.22GHz continuous tuning range, phase noise figure-of-merit (FoM) of 192.7dB at 2.3GHz and better than 188dB across the entire operating frequency range. The oscillator consumes 15–16.4mW from a 0.6V supply and occupies an active area of 0.7mm2.","PeriodicalId":170594,"journal":{"name":"2018 IEEE Radio and Wireless Symposium (RWS)","volume":"8 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A low phase noise wide-tuning range class-F VCO based on a dual-mode resonator in 65nm CMOS\",\"authors\":\"Naushad Dhamani, Paria Sepidband, K. Entesari\",\"doi\":\"10.1109/RWS.2018.8305009\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a low phase noise wide tuning range Class-F voltage controlled oscillator using a dual-mode resonator. In comparison to other conventional wideband oscillators the proposed capacitively/inductively-coupled resonator will integrate the benefits of Class-F voltage control oscillators and dual-mode switching networks to obtain simultaneous low phase noise and wide-tuning range. The proposed structure prototyped in a 65nm TSMC CMOS technology, shows a 2.14–4.22GHz continuous tuning range, phase noise figure-of-merit (FoM) of 192.7dB at 2.3GHz and better than 188dB across the entire operating frequency range. The oscillator consumes 15–16.4mW from a 0.6V supply and occupies an active area of 0.7mm2.\",\"PeriodicalId\":170594,\"journal\":{\"name\":\"2018 IEEE Radio and Wireless Symposium (RWS)\",\"volume\":\"8 5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Radio and Wireless Symposium (RWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RWS.2018.8305009\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Radio and Wireless Symposium (RWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2018.8305009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low phase noise wide-tuning range class-F VCO based on a dual-mode resonator in 65nm CMOS
This paper presents a low phase noise wide tuning range Class-F voltage controlled oscillator using a dual-mode resonator. In comparison to other conventional wideband oscillators the proposed capacitively/inductively-coupled resonator will integrate the benefits of Class-F voltage control oscillators and dual-mode switching networks to obtain simultaneous low phase noise and wide-tuning range. The proposed structure prototyped in a 65nm TSMC CMOS technology, shows a 2.14–4.22GHz continuous tuning range, phase noise figure-of-merit (FoM) of 192.7dB at 2.3GHz and better than 188dB across the entire operating frequency range. The oscillator consumes 15–16.4mW from a 0.6V supply and occupies an active area of 0.7mm2.