集成有源限制器的鲁棒x波段GaN LNA

Çağdaş Yağbasan, Ahmet Aktuğ
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引用次数: 0

摘要

本文报道了采用商用0.25 um微带GaN-on-SiC高电子迁移率晶体管(HEMT)技术的x波段单片微波集成电路(MMIC)低噪声放大器(LNA)的设计和测量。采用一种新颖的主动限制测量方法,在单个芯片上获得了低于1.75 dB的噪声系数(NF)和高于16 W的连续波输入功率生存能力。据作者所知,在给定的噪声系数水平下,该LNA具有最高的输入功率处理性能,尽管晶体管没有针对低噪声工作进行优化,并且实现了输入匹配网络,以折衷噪声系数和输入回波损耗(优于10 dB)。研究结果为单片GaN前端收发器架构的实现提供了前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Robust X-band GaN LNA with Integrated Active Limiter
In this paper, design and measurement of X-Band monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNA) using a commercial 0.25 um microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology are reported. Using a novel active limiting approach in measurements, lower than 1.75 dB noise figure (NF) and higher than 16 W CW input power survivability is obtained from a single chip. To the best of authors' knowledge, said LNA has the highest input power handling performance for the given noise figure level although transistors are not optimized for low-noise operation and input matching network is realized to compromise between noise figure and input return loss which is better than 10 dB. Results are promising for single chip GaN frontend transceiver architecture realization.
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