用于高性能HEMT和MMIC器件的T栅极的制造和优化

2022 IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2022-12-11 DOI:10.1109/ICEE56203.2022.10117759

Aneesh M. Joseph

{"title":"用于高性能HEMT和MMIC器件的T栅极的制造和优化","authors":"Aneesh M. Joseph","doi":"10.1109/ICEE56203.2022.10117759","DOIUrl":null,"url":null,"abstract":"The design of T -Gate is crucial for the performance of AlGaN/GaN power amplifiers. Optimizing aT-gate reproducibly is a challenge on Gallium Nitride (GaN) on Silicon Carbide (SiC) due to the charging of the substrate. Single-step electron-beam lithography (EBL) has been demonstrated by engineering by dose and photoresist parameters.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication and optimization of T -gate for high performance HEMT and MMIC devices\",\"authors\":\"Aneesh M. Joseph\",\"doi\":\"10.1109/ICEE56203.2022.10117759\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design of T -Gate is crucial for the performance of AlGaN/GaN power amplifiers. Optimizing aT-gate reproducibly is a challenge on Gallium Nitride (GaN) on Silicon Carbide (SiC) due to the charging of the substrate. Single-step electron-beam lithography (EBL) has been demonstrated by engineering by dose and photoresist parameters.\",\"PeriodicalId\":281727,\"journal\":{\"name\":\"2022 IEEE International Conference on Emerging Electronics (ICEE)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEE56203.2022.10117759\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEE56203.2022.10117759","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

T栅极的设计对AlGaN/GaN功率放大器的性能至关重要。由于衬底的充电性，氮化镓(GaN)在碳化硅(SiC)上优化at栅极的可重复性是一个挑战。单步电子束光刻(EBL)已通过剂量和光抗蚀剂参数进行了工程验证。

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Fabrication and optimization of T -gate for high performance HEMT and MMIC devices

The design of T -Gate is crucial for the performance of AlGaN/GaN power amplifiers. Optimizing aT-gate reproducibly is a challenge on Gallium Nitride (GaN) on Silicon Carbide (SiC) due to the charging of the substrate. Single-step electron-beam lithography (EBL) has been demonstrated by engineering by dose and photoresist parameters.

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2022 IEEE International Conference on Emerging Electronics (ICEE)

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