大功率可控硅的计算机模型

1970 IEEE Power Electronics Specialists Conference Pub Date : 1976-06-08 DOI:10.1109/PESC.1976.7072898

H. Nienhaus, J. Bowers, P. C. Herren

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引用次数: 8

摘要

本文描述了一个用于高功率可控硅的通用计算机模型，该模型可以精确模拟所有重要的静态和动态性能特征，包括扩展、栅极隔离和锁存等二维效应。列出了一个代表性装置的计算机模拟静态特性与测量静态特性的比较。还包括计算机模拟与测量的导通瞬态的比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Computer model for a high power SCR

This paper describes a general computer model for a high power SCR that gives an accurate simulation of all important static and dynamic performance characteristics including such two-dimensional effects a spreading, gate isolation, and latch-in. Computer simulated vs. measured static characteristics of a representative device are listed for comparison. A comparison of a computer simulated vs. measured turn on transient is also included.

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1970 IEEE Power Electronics Specialists Conference

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