射频磁控溅射法在聚四氟乙烯衬底上溅射纳米晶硅薄膜的沉积温度依赖性

N. H. Mahzan, S. B. Hashim, S. H. Herman, U. Noor, M. Rusop
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摘要

采用射频磁控溅射技术在聚四氟乙烯(PTFE, teflon)衬底上制备了纳米晶硅(nc-Si)薄膜。本研究的目的是研究聚四氟乙烯衬底上nc-Si的物理和结构性质。采用拉曼光谱和场发射扫描电镜(FESEM)对薄膜的性能进行了表征。我们发现,在室温下,沉积的薄膜是无定形的,然而,当衬底加热时,开始发生结晶,导致沉积的薄膜是nc-Si薄膜。除室温沉积外,薄膜厚度和沉积速率随衬底温度的升高而增大。与低温沉积相比,高温沉积的晶粒密度更高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Deposition temperature dependence of the sputtered nanocrystalline silicon thin films on Teflon substrates deposited by RF magnetron sputtering method
Nanocrystalline silicon (nc-Si) thin films were deposited on polytetrafluoroethylene (PTFE, teflon) substrates using RF magnetron sputtering. The aim of this study was to study the physical and structural properties of nc-Si on the Teflon substrate. The thin films properties were examined by Raman spectroscopy and field emission scanning electron microscopy (FESEM). We found that at room temperature, the deposited thin film was amorphous, however, crystallization started to occur when the substrate was heated, resulting that the deposited thin films are nc-Si thin films. The film thickness and the deposition rate increased with substrate temperature except for the room temperature deposition. The grains seemed to be more dense for the deposition at higher temperature compared to the lower temperature.
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